Michigan Ion Beam Laboratory - 1.7 MV Tandem Accelerator

The Tandetron is a high voltage particle accelerator used for Ion Implantation, Ion Beam Analysis and irradiation experiments. This 1.7 MV Tandetron accelerator is a solid-state, gas insulated, high frequency device capable of operation between 0.4 and 1.7 MV. The accelerator can operate either with a duoplasmatron, a sputter-type ion source or a volume source (TORVIS). The duoplasmatron source is a high brightness, gaseous ion source that produces H + and He ++ ions. Other light ions can also be produced. The sputter ion source can produce ions of many elements at currents ranging up to several µA at the target. The newest addition, the TORVIS, can produce H- currents in excess of 300 µA and is used for high intensity radiation damage studies. The beamline consists of a quadrupole triplet for focusing, an analyzing magnet, a raster scanner and steerer system, and an aperture system. The Tandetron has two beamlines, one for implantation and radiation damage and a second for ion beam analysis. The 15° implantation beamline has a highly versatile target chamber with multiple access ports, a sample manipulation stage and an intro-duction stage for rapid sample interchange. The chamber can also be equipped with a heating/cooling stage capable of temperatures from -196°C to 800°C. The chamber is cryopumped and operates in the 10 -9 Torr regime. Behind the main target chamber is a radiation damage chamber which is electrically isolated. This special chamber contains a temperature-controlled sample stage for radiation damage experiments between 200°C and 600°C. 

Ion Irradiation and Ion Implantation

Ion type: ions from gases and sputtered materials 
Ion energy range: > 3.2 MeV for protons >5 MeV for He MeV 
Ion current range: >70 uA for protons, >200 nA for He  
Target chamber vacuum: better than 10 ^-9 Torr 
Sample temperature control: -196°C to 800°C 
Sample Handling: rapid interchange device
Capabilities: ion implantation, ion beam mixing, radiation damage

Ion Beam Analysis

The 30° beamline is used for ion beam analysis and contains an aperture system for ion channeling. The analysis chamber is turbopumped and equipped for rapid sample turnaround. It contains a two-axis goniometer and detectors for backscattering and glancing angle measurements. Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) elastic recoil detection (ERD) and ion channeling are conducted in this chamber.

Tandetron -Ion Beam Analysis: 
Ion type: gases
Ion energy range: >.5 MeV 
Target chamber vacuum: 10 ^-7 Torr 
Detector Arrangement: backscattering, glancing, variable
Sample stage: tilt-rotate goniometer 
Sample Handling: rapid interchange device Capabilities: RBS, NRA, ERD, ion channeling