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1.7 MV General Ionex Tandetron Particle Accelerator
The Tandetron is a high voltage particle
accelerator used for Ion Implantation, Ion Beam Analysis and irradiation experiments.
This 1.7 MV Tandetron accelerator is a solid-state, gas insulated, high
frequency device capable of operation between 0.4 and 1.7 MV. The accelerator
can operate either with a duoplasmatron, a sputter-type ion source or a volume source (TORVIS).
The duoplasmatron source is a high brightness, gaseous ion source that produces
H + and He ++ ions. Other light ions can also be produced. The sputter
ion source can produce ions of many elements at currents ranging up to
several µA at the target. The newest addition, the TORVIS, can produce H- currents in excess of 300 µA and is used for high intensity radiation damage studies. The beamline consists of a quadrupole triplet
for focusing, an analyzing magnet, a raster scanner and steerer system,
and an aperture system. The Tandetron has two beamlines, one for implantation
and radiation damage and a second for ion beam analysis. The 15° implantation
beamline has a highly versatile target chamber with multiple access ports,
a sample manipulation stage and an intro-duction stage for rapid sample
interchange. The chamber can also be equipped with a heating/cooling stage
capable of temperatures from -196°C to 800°C. The chamber is cryopumped
and operates in the 10 -9 Torr regime. Behind the main target chamber is
a radiation damage chamber which is electrically isolated. This special
chamber contains a temperature-controlled sample stage for radiation damage
experiments between 200°C and 600°C.
Ion Irradiation and Ion Implantation
- Ion type: ions from gases and sputtered materials
- Ion energy range: > 3.2 MeV for protons >5 MeV for He MeV
- Ion current range: >70 uA for protons, >200 nA for He
- Target chamber vacuum: better than 10 -9 Torr
- Sample temperature control: -196°C to 800°C
- Sample Handling: rapid interchange device
- Capabilities: ion implantation, ion beam mixing, radiation damage
Ion Beam Analysis
The 30° beamline is used for ion beam analysis and contains an aperture
system for ion channeling. The analysis chamber is turbopumped and equipped
for rapid sample turnaround. It contains a two-axis goniometer and detectors
for backscattering and glancing angle measurements. Rutherford backscattering
spectrometry (RBS), nuclear reaction analysis (NRA) elastic recoil detection
(ERD) and ion channeling are conducted in this chamber. Tandetron -
Ion Beam Analysis
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Ion type: gases
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Ion energy range: >.5 MeV
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Target chamber vacuum: 10 -7 Torr
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Detector Arrangement: backscattering, glancing, variable
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Sample stage: tilt-rotate goniometer
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Sample Handling: rapid interchange device
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Capabilities: RBS, NRA, ERD, ion channeling
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