The instrument is an open air 400 KV ion implanter*, manufactured by National Electrostatics Corp. (NEC-Middleton WI, USA) with an ion source model 921 by Danfysik (Denmark) and an ion implantation stage by High Volatge Engineering Europa (The Netherlands). In this unique design, NEC took the best hardware and technology available on the market and put together a state-of-the-art instrument unique in the world in terms of characteristics.

The new implanter (NEC)

The implanter is equipped with a very versitile ion source (Danfysik)

Capabilities

• Ion energy range: 10-400 keV 
• Ion Type: virtually anythoing from the periodic table of elements
• Ion current range: in excess of 100's of uA depending on ion type 
• Target chamber vacuum: 10 ^-8 Torr 
• Sample temperature control: -196°C to 800°C 
• Sample irradiation area: up to 6 inch²  with 4 wafers loaded simultaneous
• Uses: ion implantation, ion beam mixing

The Implant stage was built by High Voltage Engineering (HVEE) and allows for irradiations of up to four 6 inch wafers or up to five 4 inch wafer before loading/unloading with a range from liquid nitrogen temperatures to 800⁰ C.

Inside the chamber: Wafer holder and Faraday cup (HVEE)

Beamline with implant stage (HVEE)

• H, He, Ne, Ar, N, O
• Ar²⁺, O²⁺
• C, Si, Be, Ce
• Ag, Au, Sm, Te, Co, Ta, W, Cr, Bi, Fe, Ni, Er, In