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CUOS - Materials Science

Experimental Facilities

  • LIBS
  • Ultrafast Laser - Material Interaction Laboratory
  • Sputter Deposition System
  • UHV Si Molecular Beam Epitaxy Growth
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Home  /  Research  /  Center for Ultrafast Optical Science  /  Research Groups  /  Materials Science  /  Experimental Facilities  /  UHV Si Molecular Beam Epitaxy Growth

UHV Si Molecular Beam Epitaxy Growth

UHV Si Molecular Beam Epitaxy GrowthLocation: B122 Gerstacker Building

This is a state of the art ultra-high vacuum e-beam evaporation system complete with RHEED, LEED, Auger electron spectroscopy, Mass Spectroscopy.

This facility is located beneath the Center for Ultrafast Optical Sciences and has expanded capabilites including ultrafast pulsed laser deposition and film modification tools.

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© 2008 College of Engineering, University of Michigan
Last edited on: 4/1/2008